Tutorial Program ICPT2023, Kanazawa, Japan
Date
Oct. 30, 2023, 9:00 am to 5:00 pm
Venue
Kanazawa Tokyu Hotel, Kanazawa, Ishikawa, Japan
Scope
The CMP (Chemical Mechanical Polishing) community has witnessed significant growth over the past decade and is now in need of a comprehensive CMP tutorial program. This program aims to provide not only updates on recent issues in CMP technology but also guidance to participants in shaping future directions. Its purpose is to cultivate connections within the CMP community and encourage the exchange of ideas and collaboration among end-users, vendors, and research institutes. The tutorial program will continuously evolve to accommodate changing technologies and trends. To ensure the utmost quality content and expertise on CMP technology, we have primarily invited speakers from Japan this time. We are confident that you will find immense value in the program's content and contribute to the overall advancement of CMP technology.
Schedule
This topic will present a comprehensive overview of CMP technology, including its history and various applications in different devices. It will cover the basic principles of CMP, such as the process steps and material involved, and will focus on its diverse process applications.
Yukiteru Matsui joined Toshiba Corporation in 1997 and has been engaged in research and development of CMP process technology for Logic, CMOS sensor, NAND Flash memory and emerging memory devices. He received his Ph.D. degree in chemical engineering from Tokyo Institute of Technology, Japan in 2011 and his Master’s degree and Bachelor’s degree in electrical engineering from Tohoku University, Japan in 1997 and 1995 respectively. Since 2016, he has been an executive committee member of International Conference on Planarization/CMP Technology (ICPT). He is also an expert in intellectual property having patent attorney license.
According to the recent trend of miniaturization of semiconductor devices, CMP slurries have been required to be designed from the micro/nanoscopic viewpoints with micro/nanoscale metrologies, molecular-level simulations and informatics. In this tutorial, in response to increasing interest in introducing such micro/nanoscopic technologies into CMP slurry designs, recent applications of those technologies to the investigations on CMP slurries are focused on.
Firstly, as basic and general knowledge on CMP process and slurry, expression mechanisms of functions of materials in slurries will be lectured. Then, the several latest technologies applied to investigate the micro/nanoscopic mechanisms of CMP slurries will be overviewed.
Shota Suzuki is an assistant manager and a veteran engineer at Fujimi Incorporated. He received his degree of Master of Engineering from Toyo University, where he studied a quantitative analysis of metal ion and the self-assembled soft materials. He joined Fujimi Incorporated in 2007, and has contributed to the development of CMP slurries. His recent interests are the science of CMP, and he is working on elucidating the mechanisms of CMP and developing advanced slurry formulation methods by implementing hybrid approaches of materials informatics and advanced measurement technologies.
CMP process performance attributes like material removal rates, yield, planarization and defects on a tool depend on the balance between chemical and mechanical actions provided by the interactions of the wafer with various consumables (polishing pads, conditioning disks and slurry) under the relevant process conditions. Such interactions can be expected to occur at multiple length (i.e., wafer, die, feature, asperity) and time scales.
The grooves facilitate the slurry transport under the wafer providing the necessary polish chemistry and the removal of polish debris and heat. The top pad/sub pad stack mechanics impact the large-scale compliance of the wafer with the pad. Texture formation is governed by polymer fracture mechanics, disk characteristics (like individual diamonds and their arrangement on the disk), the conditioning recipe (downforce and sliding speed), pad mechanical properties and disk/pad kinematics. The texture and the grooves together determine the slurry flow characteristics and the hydrodynamic pressure developed in the pad-wafer gap. Asperity level contact pressures developed at the texture asperities contacting the wafer provide the necessary mechanical action for material removal. The hydrodynamic pressure and the contact pressures balance the applied polish downforce and hence determine the state of contact during CMP. Understanding the underlying physics of such interactions impacting the state of pad-wafer contact and its control are critical to the tailoring of consumable products to customer processes.
This tutorial focuses on specific aspects of such complex dependencies with case studies and an overview of how such an understanding can be leveraged in the effective design and rapid placement of polish consumables customized to the evolving needs of the industry.
Dr. Ravi Palaparthi is a Senior Researcher in CMP Applications Engineering at DuPont. He is a seasoned technology professional in the CMP consumable space where he has been operating since 2003. He has held various roles in the CMP Product, Process and Applications R&D functions (within Rodel/ Rohm and Haas/ Dow ) leading and driving programs focused on minimizing cycles of learning in product development and placement by leveraging materials- process- property -performance linkages, and predictive modeling. He has several external publications and seven US patents in this space.
He is a chemical engineer by training and holds a PhD (with specialization in surfactant transport and interfacial fluid dynamics) from City College of New York and a B.Tech from Indian Institute of Technology, Chennai. In his stints outside of CMP, he drove efforts in the generic pharmaceutical industry reducing experimentation and risks of process scale-up via development and roll out of process digital twins grounded on multi-scale process modeling and targeted experimentation.
CMP is one of key technology to make cutting edge semiconductor devices. This tutorial shows CMP’s basic technologies (Platform, Head technology, Endpoint and CLC technology and post CMP clean and dry technology) and its features including recent requirement and measures to overcome technical challenges in CMP arena by Ebara Corp. who is major CMP supplier in the industry last ~30 years.
-1999 Graduated Hitotsubashi Univ. (Major: micro economics)
-1999 Join Ebara Corporation, assigned to Precision Machinery Group as Sales account.
-2006 Assign to Ebara Technologies, Inc.(Ebara’s USA subsidiary) as Sr. Support Liaison.
-2011 Assign to Ebara Precision Machinery Taiwan as Sales Manager.
-2016 Back to Japan in Marketing in Precision Machinery Company.
-2020 Assign Marketing Manager in HQ of Ebara Corp.
-2023 Assign Technical Marketing Manager in Equipment Division, PMC. Doing CMP and other equipment technical marketing activity, collaboration arrangement with partners etc.
As integrated circuit and logic device feature sizes approach the 3-nm node, limiting induced defectivity during the Chemical Mechanical Planarization (CMP) process (polishing and substrate cleaning) is paramount. The CMP/p-CMP processes cause defects that can be classified as mechanical (i.e., scratching), chemical (i.e., corrosion), or physiochemical (i.e., adsorbed contaminants) according to the interfacial mechanism of formation. This tutorial will address the following topics thru a series of case studies highlighting the fundamental interfacial dynamics necessary for the rationale design of advanced p-CMP cleaning processes. A survey of current p-CMP schemes (consumables and processing conditions) for metal, advanced STI, and emerging materials (SiC and GaN) will be presented. Specific emphasis will be placed on highlighting challenges for mitigating particle, corrosion, and residue defects. More specifically, these case studies will highlight innovative approaches to p-CMP cleaning in the following areas:
• Modulation of the brush/chemistry/wafer interface for enhanced carbon residue removal.
• Contact and Non-contact removal of Ceria via interfacial chemical activation.
• Chemistry, consumable, and process innovation for the p-CMP of emerging WBG materials (i.e., SiC and GaN).
• Combinational approaches (megasonic energy and brush cleaning) for advanced substrate cleaning.
Dr. Jason Keleher received his Ph.D. (Organic Chemistry) from Clarkson University (New York) in 2004 under the guidance of the late Dr. Yuzhuo Li, working on the “Development of Next Generation Consumable Technologies for Chemical Mechanical Planarization of Cu/Low K Devices.” After graduate school, Jason worked as a postdoctoral research scientist at Komag Inc. (now Western Digital Corporation) in the R&D Division, where he worked on the design of next-generation texturing processes for magnetic thin film media.
From 2005-2009, Jason was a senior research scientist at Cabot Microelectronics Corporation (now Entegris Inc.). In collaboration with his team, he provided a fundamental understanding of the chemical reaction mechanisms at the nanoparticle/polymer/substrate interface and was awarded the 2007-2008 Inventor of the Year. In 2009, Jason jumped back into academia and is currently a Professor and Chair of Chemistry at Lewis University. Jason was honored with the Distinguished Lasallian Educator Award, the American Chemical Society Stanley C. Israel Award for Advancing Diversity in the Great Lakes Region, and most recently, the Br. Louis Seiler Ministry of Teaching Award, which shows his dedication to the advancement of research and chemical education. Jason has been awarded several US and Foreign Patents and published numerous articles in journals and conference proceedings, many of which have resulted from successful collaboration with industrial partners. Currently, Jason leads a team of both undergraduate and graduate students in research, which has a focus on the synthesis and characterization of nanoparticles and nanocomposite materials for applications ranging from surfaces that have antibacterial functionality, wound management, aviation safety, energy/sustainability applications, Chemical Mechanical Planarization (CMP), and mechanistic studies relevant to nanoparticle/polymer interactions.
The importance of next-generation crystal substrates such as SiC, GaN, and diamond substrates is increasing since these materials are promising substrates to fabricate the superior power electronics devices. It is required to produce damage-free and atomically smooth surface for these substrates, but we face the difficult situation to produce such perfect surfaces by CMP due to the high hardness and thermal/chemical stabilities of these materials. The basics, recent progress, and future challenges for CMP of these materials will be detailed to provide the better understanding and strategies to overcome the situation.
Dr. Hideo Aida is currently Associate Professor of Mechanical Engineering Department of Nagaoka University of Technology. His research expert and interest area are development of high efficiency CMP process for fabricating atomically flat surface of sapphire, GaN, SiC, and diamond. In relation to this research purpose, he also develops a rapid evaluation method for damage layers on the surface and subsurface induced by precise processing. Another aspect of his work is crystal growth. Currently, he is working on the growth of larger sized single crystal diamond by CVD method.